Epitaxial Growth of PbS on Micas

Epitaxial growth of Co3O3 on CoO(100)

Effects of crystalline microstructure on epitaxial growth.

The results of kinetic Monte Carlo simulations of epitaxial growth on fcc~100! and bcc~100! surfaces in which the correct crystal geometry is taken into account are reported. The existence of downward funneling to fourfold hollow sites leads to a downward current for large angles and to angle selection as observed in a variety of experiments. We have used our model to simulate Fe/Fe~100! deposi...

Epitaxial growth of InP nanowires on germanium.

The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V...

Low temperature CVD growth of PbS films on plastic substrates.

The low temperature growth of crystalline PbS films has been achieved on plastic substrates by CVD using a xanthate. The possible mechanism involved in this low temperature deposition has been probed by density functional theory calculations.

GROWTH OF EPITAXIAL BaTiO

Metalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO 3 thin films on (100) MgO substrates at 600'C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = CIIH190 2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectro...